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Fast switching hybrid IGBT device with trenched contacts
Fast switching hybrid IGBT device with trenched contacts
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机译:具有沟槽触点的快速开关混合IGBT器件
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摘要
A hybrid IGBT device having a VIGBT and LDMOS structures comprises at least a drain trenched contact filled with a conductive plug penetrating through an epitaxial layer, and extending into a substrate; a vertical drain region surrounding at least sidewalls of the drain trenched contact, extending from top surface of the epitaxial layer to the substrate, wherein the vertical drain region having a higher doping concentration than the epitaxial layer.
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