Optimum design of 1.4 kV non-punch-through trench IGBTs: the nextgeneration of high-power switching devices

摘要

The trench insulated gate bipolar transistor (IGBT) is widelynregarded as a worthy replacement of DMOS IGBTs and GTO thyristors in anwide range of applications, from motor control (1.4 kV) to HVDC (6.5nkV). An optimum design of 1.4 kV NPT trench IGBTs using a new fullynintegrated optimisation system comprised of process and devicensimulators and an RSM optimiser is described. The use of this new TCADnsystem has contributed largely to realising devices with characteristicsnfar superior to the previous DMOS generation of IGBTs. Full experimentalnresults on 1.4 kV trench IGBTs are reported, which are in excellentnagreement with the TCAD predictions