首页> 外国专利> CIRCUIT TOPOLOGY WITH AN INPUT STAGE HAVING A WIDE DYNAMIC RANGE AND CONSTANT TRANSCONDUCTANCE, COMPENSATED BEFORE PROCESS, VOLTAGE AND TEMPERATURE VARIATIONS.

CIRCUIT TOPOLOGY WITH AN INPUT STAGE HAVING A WIDE DYNAMIC RANGE AND CONSTANT TRANSCONDUCTANCE, COMPENSATED BEFORE PROCESS, VOLTAGE AND TEMPERATURE VARIATIONS.

机译:具有输入阶段的电路拓扑具有广泛的动态范围和恒定的跨导性,在处理,电压和温度变化之前得到补偿。

摘要

The present invention refers to an input stage for voltage amplifiers; which main characteristics are: a wide dynamic range at the inlet, a constant transconductance behavior and a robust performance regarding PVT variations. For obtaining a wide dynamic range at the inlet, complementary differential pairs are used; the behavior of the constant transconductance being obtained by a current cut emulation in the branches of the differential pairs, said interruption originates that only one type of differential pair be operated at the same time according to the level of voltage in the common mood of the input signal. Due to the aforementioned description, the total sum of transconductance will always correspond to that of a single pair; the transition region will not show any important peak. On the other hand, the circuit is functional even in nanometric technologies different from CMOS, such as the SOI technology, where it was correctly tested at a scale of 45 nanometers.
机译:本发明涉及电压放大器的输入级。其主要特征是:入口处的动态范围宽,恒定的跨导行为以及关于PVT变化的强大性能。为了在入口处获得较宽的动态范围,使用了互补差分对。通过在差分对的分支中通过电流切断仿真获得恒定跨导的行为,所述中断产生的原因是,根据输入的共同状态下的电压电平,只能同时操作一种类型的差分对。信号。由于上述说明,跨导的总和将始终对应于一对。过渡区域不会显示任何重要的峰。另一方面,该电路即使在不同于CMOS的纳米技术(例如SOI技术)中也能正常工作,在SOI技术中,该电路已在45纳米的规模上进行了正确测试。

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