TOPOLOGY CIRCUIT OF A HIGH GAIN VOLTAGE AMPLIFIER WITH DOUBLE SUM OF TRANSCONDUCTANCE AND ROBUST TO PROCESS, VOLTAGE AND TEMPERATURE VARIATIONS.

摘要

The present invention refers to a high gain voltage amplifier robust to PVT variations. The gain of the present invention is provided by the double sum of transconductance in two stages. In addition, the characteristic of robustness before PVT variations (specifically the gain parameter), is achieved according to a topological condition, this does not requiring calibrating, sensing or controlling circuits, which may increase the complexity, power consumption and area. On the other hand, the circuit is functional even in nanometric technologies different from CMOS, such as the SOI technology, where it was correctly proved at a scale of 45 nanometers.