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Development of Robust Analog and Mixed-Signal Circuits in the Presence of Process- Voltage-Temperature Variations

机译:在过程电压-温度变化的情况下开发鲁棒的模拟和混合信号电路

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摘要

Continued improvements of transceiver systems-on-a-chip play a key role in the advancement of mobile telecommunication products as well as wireless systems in biomedical and remote sensing applications. This dissertation addresses the problems of escalating CMOS process variability and system complexity that diminish the reliability and testability of integrated systems, especially relating to the analog and mixed-signal blocks. The proposed design techniques and circuit-level attributes are aligned with current built-in testing and self-calibration trends for integrated transceivers. In this work, the main focus is on enhancing the performances of analog and mixed-signal blocks with digitally adjustable elements as well as with automatic analog tuning circuits, which are experimentally applied to conventional blocks in the receiver path in order to demonstrate the concepts. The use of digitally controllable elements to compensate for variations is exemplified with two circuits. First, a distortion cancellation method for baseband operational transconductance amplifiers is proposed that enables a third-order intermodulation (IM3) improvement of up to 22dB. Fabricated in a 0.13?m CMOS process with 1.2V supply, a transconductance-capacitor lowpass filter with the linearized amplifiers has a measured IM3 below -70dB (with 0.2V peak-to-peak input signal) and 54.5dB dynamic range over its 195MHz bandwidth. The second circuit is a 3-bit two-step quantizer with adjustable reference levels, which was designed and fabricated in 0.18?m CMOS technology as part of a continuous-time SigmaDelta analog-to-digital converter system. With 5mV resolution at a 400MHz sampling frequency, the quantizer's static power dissipation is 24mW and its die area is 0.4mm^2. An alternative to electrical power detectors is introduced by outlining a strategy for built-in testing of analog circuits with on-chip temperature sensors. Comparisons of an amplifier's measurement results at 1GHz with the measured DC voltage output of an on-chip temperature sensor show that the amplifier's power dissipation can be monitored and its 1-dB compression point can be estimated with less than 1dB error. The sensor has a tunable sensitivity up to 200mV/mW, a power detection range measured up to 16mW, and it occupies a die area of 0.012mm^2 in standard 0.18?m CMOS technology. Finally, an analog calibration technique is discussed to lessen the mismatch between transistors in the differential high-frequency signal path of analog CMOS circuits. The proposed methodology involves auxiliary transistors that sense the existing mismatch as part of a feedback loop for error minimization. It was assessed by performing statistical Monte Carlo simulations of a differential amplifier and a double-balanced mixer designed in CMOS technologies.
机译:收发器片上系统的不断改进在移动电信产品以及生物医学和遥感应用中的无线系统的发展中起着关键作用。本文解决了CMOS工艺可变性和系统复杂性不断提高的问题,这些问题降低了集成系统的可靠性和可测试性,尤其是与模拟和混合信号模块有关的问题。拟议的设计技术和电路级属性与集成收发器的当前内置测试和自校准趋势保持一致。在这项工作中,主要重点是通过数字可调元件以及自动模拟调谐电路来增强模拟和混合信号模块的性能,这些电路在实验上应用于接收器路径中的常规模块,以演示这些概念。两个电路举例说明了使用数字可控元件来补偿变化。首先,提出了一种用于基带运算跨导放大器的失真消除方法,该方法能够将三阶互调(IM3)改进至22dB。采用0.13?m CMOS工艺,1.2V电源制造,带有线性放大器的跨导电容器低通滤波器在195MHz时测得的IM3低于-70dB(具有0.2V峰峰值输入信号)和54.5dB的动态范围带宽。第二个电路是一个具有可调参考电平的3位两步量化器,它是采用0.18?m CMOS技术设计和制造的,是连续时间SigmaDelta模数转换器系统的一部分。在400MHz采样频率下分辨率为5mV,该量化器的静态功耗为24mW,其裸片面积为0.4mm ^ 2。通过概述使用片上温度传感器对模拟电路进行内置测试的策略,介绍了一种电力检测器的替代方案。将放大器在1GHz时的测量结果与片上温度传感器的直流电压输出进行比较,可以监控放大器的功耗,并以不到1dB的误差估算其1dB压缩点。该传感器的可调灵敏度高达200mV / mW,功率检测范围高达16mW,在标准的0.18?m CMOS技术中,其芯片面积为0.012mm ^ 2。最后,讨论了一种模拟校准技术,以减少模拟CMOS电路的差分高频信号路径中晶体管之间的失配。所提出的方法涉及辅助晶体管,该辅助晶体管感测现有的失配,作为反馈环路的一部分,以实现误差最小化。它是通过对以CMOS技术设计的差分放大器和双平衡混频器进行统计蒙特卡洛模拟进行评估的。

著录项

  • 作者

    Onabajo Marvin Olufemi;

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  • 年度 2011
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  • 原文格式 PDF
  • 正文语种 en_US
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