GALLIUM NITRIDE-BASED LIGHT-EMITTING DIODE WITH CURRENT EXPANDING STRUCTURE

摘要

A gallium nitride-based light-emitting diode with a current expanding structure. An LED structure comprises a substrate (100), a light-emitting epitaxial layer (101) located on the substrate, and a current expanding structure located on the light-emitting epitaxial layer, wherein the current expanding structure comprises a transparent electrode expanding strip (103) and a metal electrode expanding strip (104) attached to the side wall of the transparent electrode expanding strip (103). By means of the current expanding structure, not only the current expanding effect can be improved, electrode shading reduced, and the light-emitting efficiency improved, but also a high voltage (Vf) can be avoided.