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Cmos adjustable over voltage esd and surge protection for led application

机译:CMOS可调节的过电压ESD和浪涌保护,适用于LED应用

摘要

Various embodiments relate to a light emitting diode protection circuit, including: a plurality of diodes connected in series; an input connected to a first diode of the plurality of diodes; an output; a first resistor connected between the plurality of diodes and the output; a transistor with a gate connected to a junction between the first resistor and the plurality of diodes and a source connected to the output; a second resistor connected between the input and drain of the transistor; and a silicon controlled rectifier (SCR) with an anode connected to the input, a base connected to the drain of the transistor, and a cathode connected to the output.
机译:各种实施例涉及一种发光二极管保护电路,包括:串联连接的多个二极管;和输入连接到多个二极管中的第一二极管;输出;第一电阻器,连接在多个二极管和输出之间;晶体管,其栅极连接到第一电阻器和多个二极管之间的结,而源极连接到输出。第二电阻器,连接在晶体管的输入和漏极之间;硅可控整流器(SCR),其阳极连接到输入,基极连接到晶体管的漏极,阴极连接到输出。

著录项

  • 公开/公告号EP2590218B1

    专利类型

  • 公开/公告日2014-06-04

    原文格式PDF

  • 申请/专利权人 NXP B.V.;

    申请/专利号EP20120180332

  • 发明设计人 WERNER ACHIM;RITTER HANS-MARTIN;

    申请日2012-08-13

  • 分类号H01L27/02;H05B33/08;

  • 国家 EP

  • 入库时间 2022-08-21 15:48:40

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