DIRECT CURRENT ION IMPLANTATION FOR SOLID PHASE EPITAXIAL REGROWTH IN SOLAR CELL FABRICATION

摘要

An apparatus and methods for ion implantation of solar cells. The disclosure provide enhanced throughput and recued or elimination of defects after SPER anneal step. The substrate is continually implanted using continuous high dose-rate implantation, leading to efficient defect accumulation, i.e., amorphization, while suppressing dynamic self-annealing.