首页> 外国专利> Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, ferroelectric thin film, and complex electronic component

Composition for forming ferroelectric thin film, method for forming ferroelectric thin film, ferroelectric thin film, and complex electronic component

机译:铁电薄膜形成用组合物,铁电薄膜形成方法,铁电薄膜和复合电子部件

摘要

A composition for forming a ferroelectric thin film is a composition for forming a ferroelectric thin film consisting of a lead titanate-based perovskite film or a lead zirconate titanate-based complex perovskite film. The composition includes lead acetate, a stabilizing agent consisting of acetylacetone or diethanolamine, and polyvinylpyrrolidone. The ratio of the molar number of the monomer-converted polyvinylpyrrolidone to the molar number of the perovskite B site atoms included in the composition is more than 0 and less than 0.015. The weight-average molecular weight of the polyvinylpyrrolidone is 5,000 to 100,000.
机译:用于形成铁电薄膜的组合物是用于形成由钛酸铅基钙钛矿膜或锆酸钛酸铅基复合钙钛矿膜组成的铁电薄膜的组合物。该组合物包括乙酸铅,由乙酰丙酮或二乙醇胺组成的稳定剂和聚乙烯吡咯烷酮。包含在组合物中的单体转化的聚乙烯吡咯烷酮的摩尔数与钙钛矿B位点原子的摩尔数之比大于0且小于0.015。聚乙烯吡咯烷酮的重均分子量为5,000至100,000。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号