LIGHT EMITTING DEVICE USING SUPER-LUMINESCENCE IN SEMICONDUCTOR LAYER GROWN WITH MOSS-BURSTEIN EFFECT

摘要

A device and/or method for reducing, avoiding or removing band to band self absorption mechanisms in light emitting devices, such as Light Emitting Diodes, to reduce the possibility of non-radiative loss mechanisms and improve efficiency. A light emitting semiconductor layer in a LED is sufficiently doped to induce a Moss-Burstein effect in the semiconductor so that the carrier concentration in the semiconductor is so high that electrons fill the conduction band and the Fermi level is above the conduction band minima, that is the semiconductor becomes degenerate. An example device structure is presented with an active layer of degenerate n-doped InGaN. Super-luminosity is achieved for what would normally be considered inefficient high indium content InGaN light emitting devices, for example when the high carrier concentration InGaN layer is fabricated under nitrogen rich film growth conditions.