首页> 外国专利> ADDITIVE FOR COPPER ELECTROPLATING BATH, COPPER ELECTROPLATING BATH CONTAINING SAID ADDITIVE, AND COPPER ELECTROPLATING METHOD USING SAID COPPER ELECTROPLATING BATH

ADDITIVE FOR COPPER ELECTROPLATING BATH, COPPER ELECTROPLATING BATH CONTAINING SAID ADDITIVE, AND COPPER ELECTROPLATING METHOD USING SAID COPPER ELECTROPLATING BATH

机译:用于铜电镀液的添加剂,包含所述添加剂的铜电镀液以及使用所述铜电镀液的铜电镀方法

摘要

Heretofore, when copper is filled in fine grooves or holes (sometimes also referred to as "trenches" collectively, hereinafter) in a base to be coated, which has the tranches formed therein, by copper electroplating, there is a problem that voids are formed or copper is precipitated on regions other than the trenches.For the purpose of solving the problem, the present invention provides an additive for a copper electroplating bath, which comprises at least one high-molecular-weight compound which is selected from high-molecular-weight compounds each represented by general formula (1) or general formula (2) and has a weight average molecular weight of 20,000 to 10,000,000.(In the formulae, X represents at least one unit selected from units each represented by a specific structure; and the ratio of a to b, i.e., a:b, falls within the range from 10:90 to 99:1.)
机译:迄今为止,当通过电镀铜将铜填充在其中形成有沟槽的要涂覆的基底中的细槽或孔(以下有时统称为“沟槽”)中时,存在形成空隙的问题。或铜沉积在沟槽以外的区域。为了解决该问题,本发明提供了一种用于铜电镀浴的添加剂,其包含至少一种高分子量化合物,所述高分子量化合物选自分别由通式(1)表示的高分子量化合物或通式(2)的重均分子量为20,000至10,000,000。(式中,X表示从分别由特定结构表示的单元中选择的至少一个单元; a与b之比,即a:b,在10:90至99:1的范围内。)

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