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FABRICATION OF WAFER BONDED ALGAINP LIGHT EMITTING DIODE WITH TEXTURED N-TYPE ALAS CURRENT SPREADING LAYER
FABRICATION OF WAFER BONDED ALGAINP LIGHT EMITTING DIODE WITH TEXTURED N-TYPE ALAS CURRENT SPREADING LAYER
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机译:织构化的N型ALAS电流扩散层的晶圆键合AlgAINP发光二极管的制造
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摘要
The present invention relates to an wafer bonding-type AlGaInP-based light emitting diode and a method of manufacturing the same and, more specifically, to a formation of an n-type current spreading layer which is a thick texture with a low resistance and a larger band gap than an AlGaInP material on top of the n-type confinement layer in order to improve the luminous efficiency of wafer bonding type high-efficiency AlGaInP light emitting diode.
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