Fabrication of wafer bonded AlGaInP light emitting diode with textured n-type AlAs current spreading layer

摘要

The present invention relates to an wafer bonding-type AlGaInP-based light emitting diode and a method of manufacturing the same and, more specifically, to a formation of an n-type current spreading layer which is a thick texture with a low resistance and a larger band gap than an AlGaInP material on top of the n-type confinement layer in order to improve the luminous efficiency of wafer bonding type high-efficiency AlGaInP light emitting diode.