ASYMMETRIC CYCLIC DEPOSITION AND ETCH PROCESS FOR EPITAXIAL FORMATION MECHANISM OF SOURCE AND DRAIN REGIONS

摘要

According to an embodiment of the present invention, a mechanism for forming source/drain (S/D) regions of field effect transistors (FETs) uses Cl_2 as an etchant during the epitaxial formation of the S/D regions. The mechanism includes the use of an asymmetric cyclic deposition and an etch (ACDE) process that form a preparation layer enabling epitaxial growth of the following epitaxial layer with transistor dopants. The mechanism also includes the soaking of the surface of a substrate with dopant-containing precursors in order to sufficiently include transistor dopants during the epitaxial growth of the S/D regions. By using Cl_2 as etchants, the mechanism also enables high throughput of the epitaxial growth of the S/D regions.;COPYRIGHT KIPO 2014