DEVICES INCLUDING GRAPHENE LAYERS EPITAXIALLY GROWN ON SINGLE CRYSTAL SUBSTRATES

摘要

Electronic device according to the present invention is a single crystal on its major surface area-single-crystal region is yes also provided with a hexagonal crystal lattice of a substantially lattice-matched to the pin - the body, including, at least one epitaxially disposed on the single-crystal region Yes epitaxial layer provided with a pin. In the presently preferred embodiment, the single crystal region includes hexagonal BN a double layer. (A) their main surfaces onto a single-crystal region, the region is yes also provided with a substantially lattice matched hexagonal crystal lattice with respect to the pin - providing the body containing and, (b) at least one in-phase region for yes and forming a pinned layer epitaxially. In the presently preferred embodiment, step (a) further comprises the step (a2) to a single crystal hexagonal BN of the multi-layer epitaxially forming on the step (a1) and the substrate to provide a single-crystal graphite substrate. Hexagonal BN layer is yes, and provided with a substantially lattice-matched to the surface area of ​​the pin, in step (b) comprises at least one graphene layer on the surface area of ​​the hexagonal BN layer is formed epitaxially. In the present specification it has also been described in applications for the FET.