首页> 外国专利> Platinium-Gallium oxide nanowires, a preparation method thereof, and gas sensor using the same

Platinium-Gallium oxide nanowires, a preparation method thereof, and gas sensor using the same

机译:铂-氧化镓纳米线及其制备方法和使用该纳米线的气体传感器

摘要

PURPOSE: A platinum-gallium oxide nanowire, a manufacturing method thereof, and a gas sensor using the same are provided to have improved sensing sensitivity and a response rate, thereby being utilized for sensing a gas leakage, measuring the concentration of gas, and recording and alarming. CONSTITUTION: A method for manufacturing a platinum-gallium oxide nanowire includes the following steps of: manufacturing a gallium oxide nanowire by using gallium nitride powder; coating a platinum thin film on the manufactured gallium oxide nanowire; and heat-treating the gallium oxide nanowire on which the platinum thin film is coated. The platinum-gallium oxide nanowire based on one-dimension nanostructure has large surface area. The diameter of the gallium oxide nanowire is 80 nm-120 nm. [Reference numerals] (AA) Strength (arb.units); (BB) Energy (keV)
机译:用途:提供了一种铂-镓氧化物纳米线,其制造方法以及使用该铂-镓氧化物纳米线的气体传感器,以具有改善的感测灵敏度和响应率,从而被用于感测气体泄漏,测量气体浓度和记录和令人震惊。组成:一种制造铂镓氧化物纳米线的方法包括以下步骤:通过使用氮化镓粉末制造氧化镓纳米线;在制造的氧化镓纳米线上涂覆铂薄膜;热处理覆有铂薄膜的氧化镓纳米线。基于一维纳米结构的铂-氧化镓纳米线具有大的表面积。氧化镓纳米线的直径为80nm至120nm。 [参考数字](AA)强度(arb.units); (BB)能量(keV)

著录项

  • 公开/公告号KR101360085B1

    专利类型

  • 公开/公告日2014-02-12

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120031696

  • 申请日2012-03-28

  • 分类号G01N27/12;B82B3;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:33

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