首页> 外国专利> METHOD FOR FABRICATING SOLAR CELL WITH INCREASED REFLECTION CHARACTERISTIC OF SILICON NANO AND MICRO STRUCTURE THROUGH REMOVING BUNDLE AND SOLAR CELL THEREOF

METHOD FOR FABRICATING SOLAR CELL WITH INCREASED REFLECTION CHARACTERISTIC OF SILICON NANO AND MICRO STRUCTURE THROUGH REMOVING BUNDLE AND SOLAR CELL THEREOF

机译:通过去除束而制造具有增加的硅纳米结构和微结构的反射特性的太阳能电池的方法

摘要

An embodiment of the present invention relates to a method for fabricating a solar cell with an increased reflection characteristic of a silicon nano and micro structure through removing a bundle and a solar cell thereof. More specifically, it provides a method of manufacturing the solar cell and the solar cell thereof to resolve the technical problem of generating micro wire of various sizes according to the lithography designs of a photoresist and of generating micro wire of various sizes and aspect ratios by wet-etching solution concentration and immersion time. For the purpose, the invention comprises a step of preparing a first conductivity type semiconductor substrate that has a first and a second surface, a step of patterning the photoresist onto the second surface of the first conductivity type semiconductor substrate, a step of etching a semiconductor substrate by a first wirelessly in order to generate a micro wire corresponding to the photoresist and a nano wire to where it does not correspond to the photoresist, a step of etching a semiconductor substrate by a second wirelessly in order to generate a flat home part by the etched nano wire, a step of doping a second conductive type impurity to the micro wire and the home part, a step of generating a first electrode on the semiconductor substrate, and a step of generating a second electrode on the micro wire and the home part. [Reference numerals] (S1) Preparing first conductive substrate; (S2) Photoresist patterning; (S3) Etching first electroless; (S4) Etching second electroless; (S5) Doping second conductive imparities; (S6) Removing PSG; (S7) Etching emitter; (S8) Forming first electrode; (S9) Forming second electrode
机译:本发明的一个实施方案涉及一种通过去除束而制造具有提高的硅纳米和微结构的反射特性的太阳能电池的方法。更具体地,其提供了一种制造太阳能电池及其太阳能电池的方法,以解决根据光致抗蚀剂的光刻设计来产生各种尺寸的微线以及通过湿法产生各种尺寸和纵横比的微线的技术问题。 -蚀刻溶液的浓度和浸没时间。为此,本发明包括制备具有第一和第二表面的第一导电类型半导体衬底的步骤,将光刻胶图案化到第一导电类型半导体衬底的第二表面上的步骤,蚀刻半导体的步骤。为了产生对应于光致抗蚀剂的微线和不对应于光致抗蚀剂的纳米线,通过第一无线方式形成衬底,通过第二无线方式对半导体衬底进行蚀刻以产生平坦的原始部分的步骤为:蚀刻的纳米线,将第二导电类型的杂质掺杂到微线和原位部分中的步骤,在半导体衬底上产生第一电极的步骤以及在微线和原位上产生第二电极的步骤部分。 [附图标记](S1)准备第一导电基板; (S2)光刻胶图案; (S3)首先进行化学蚀刻; (S4)蚀刻第二化学镀; (S5)掺杂第二导电杂质; (S6)移除PSG; (S7)蚀刻发射器; (S8)形成第一电极; (S9)形成第二电极

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