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METHOD FOR FABRICATING SOLAR CELL WITH INCREASED REFLECTION CHARACTERISTIC OF SILICON NANO AND MICRO STRUCTURE THROUGH REMOVING BUNDLE AND SOLAR CELL THEREOF
METHOD FOR FABRICATING SOLAR CELL WITH INCREASED REFLECTION CHARACTERISTIC OF SILICON NANO AND MICRO STRUCTURE THROUGH REMOVING BUNDLE AND SOLAR CELL THEREOF
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机译:通过去除束而制造具有增加的硅纳米结构和微结构的反射特性的太阳能电池的方法
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摘要
An embodiment of the present invention relates to a method for fabricating a solar cell with an increased reflection characteristic of a silicon nano and micro structure through removing a bundle and a solar cell thereof. More specifically, it provides a method of manufacturing the solar cell and the solar cell thereof to resolve the technical problem of generating micro wire of various sizes according to the lithography designs of a photoresist and of generating micro wire of various sizes and aspect ratios by wet-etching solution concentration and immersion time. For the purpose, the invention comprises a step of preparing a first conductivity type semiconductor substrate that has a first and a second surface, a step of patterning the photoresist onto the second surface of the first conductivity type semiconductor substrate, a step of etching a semiconductor substrate by a first wirelessly in order to generate a micro wire corresponding to the photoresist and a nano wire to where it does not correspond to the photoresist, a step of etching a semiconductor substrate by a second wirelessly in order to generate a flat home part by the etched nano wire, a step of doping a second conductive type impurity to the micro wire and the home part, a step of generating a first electrode on the semiconductor substrate, and a step of generating a second electrode on the micro wire and the home part. [Reference numerals] (S1) Preparing first conductive substrate; (S2) Photoresist patterning; (S3) Etching first electroless; (S4) Etching second electroless; (S5) Doping second conductive imparities; (S6) Removing PSG; (S7) Etching emitter; (S8) Forming first electrode; (S9) Forming second electrode
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