METHOD FOR FORMING A STRAINED TRANSISTOR BY STRESS MEMORIZATION BASED ON A STRESSED IMPLANTATION MASK

摘要

unique mask for use by injection under high stress , Stress Memory Technology (Stress Memorization Technique, SMT) sequence may be provided , in such a case may be additional lithography steps are omitted . As a result, the strain can be provided without the source have a significant impact on the overall process complexity .