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Method for forming a strained transistor by stress memorization based on a stressed implantation mask
Method for forming a strained transistor by stress memorization based on a stressed implantation mask
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机译:基于应力注入掩模的应力记忆形成应变晶体管的方法
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摘要
By using an implantation mask having a high intrinsic stress, SMT sequences may be provided in which additional lithography steps may be avoided. Consequently, a strain source may be provided without significantly contributing to the overall process complexity.
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