首页> 外国专利> Wear-Leveling Method for Non-Volatile Memory in Hybrid Memory System and Hybrid Memory System

Wear-Leveling Method for Non-Volatile Memory in Hybrid Memory System and Hybrid Memory System

机译:混合存储系统中非易失性存储器的磨损均衡方法及混合存储系统

摘要

PURPOSE: In a hybrid memory system, the number of writing to a nonvolatile memory can be reduced. This can lead to increasing the lifetime of a nonvolatile memory. CONSTITUTION: Data requested to be written in a memory are stored in a memory buffer (20S). Data which are written fewest times among a certain number of data in the oldest area that has been written in the memory buffer (40S). Victim data is stored in a nonvolatile memory (50S). [Reference numerals] (10S) Request for a memory writing process; (20S) Store data in a memory buffer; (40S) Select the least written element as a victim among N elements with LRW location; (50S) Store the victim data in a PRAM Main Memory; (70S) Swap multiple data based on a page basis; (71S) Swap multiple data based on a line basis
机译:目的:在混合存储系统中,可以减少写入非易失性存储器的次数。这可以导致增加非易失性存储器的寿命。组成:请求写入内存的数据存储在内存缓冲区(20S)中。在已写入存储器缓冲器(40S)的最旧区域中的一定数量的数据中,被写入次数最少的数据。受害者数据存储在非易失性存储器(50S)中。 [附图标记](10S)请求存储器写入过程; (20S)将数据存储在存储缓冲器中; (40S)在LRW位置的N个元素中选择写得最少的元素作为受害者; (50S)将受害者数据存储在PRAM主存储器中; (70S)基于页面交换多个数据; (71S)基于行交换多个数据

著录项

  • 公开/公告号KR101380602B1

    专利类型

  • 公开/公告日2014-04-04

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20120023455

  • 发明设计人 박규호;박성규;

    申请日2012-03-07

  • 分类号G06F12;G06F3/06;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:14

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