transition metal dichalcogenides device formed by re-crystallization and transistor device using the same

摘要

The present invention relates to a transition metal dichalcogenides device formed by re-crystallization and a transistor device using the same. The present invention is to form single and poly crystals by performing a laser annealing process on amorphous transition metal dichalcogenides formed by a deposition process. For this, a semiconductor channel material is formed by recrystallizing the single and poly crystalline transition metal dichalcogenides by annealing the amorphous transition metal dichalcogenides obtained by the deposition process. [Reference numerals] (AA) After/before laser annealing Vgs_ld