首页> 外国专利> METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE STRUCTURE FOR TOUCHSCREEN USING ELECTRON BEAM EVAPORATION

METHOD FOR MANUFACTURING TRANSPARENT ELECTRODE STRUCTURE FOR TOUCHSCREEN USING ELECTRON BEAM EVAPORATION

机译:利用电子束蒸发制造用于触摸屏的透明电极结构的方法

摘要

The present invention relates to a method for manufacturing a transparent electrode structure for a touchscreen using electron beam evaporation. More specifically, a transparent electrode structure for a touchscreen is obtained by sequentially stacking, on a substrate, TiO2 having a thickness of 35 to 55 Å, SiO2 having a thickness of 450 to 475 Å, TiO2 having a thickness of 125 to 145 Å, SiO2 having a thickness of 275 to 300 Å, and ITO having a thickness of 240 to 260Å respectively in electron beam evaporation. In particular, a transparent electrode is manufactured by specifying deposition speed, partial pressure of oxygen of a sub ion gun used in the deposition, a chamber temperature, maintenance of an oxygen and vacuum level in the chamber, and pre-heating conditions before ITO deposition to form transmittance of the transparent electrode so as to be closest to that of glass or a polymer film that is a basic member in the manufacture of a panel, thereby improving transparency so as not to be identified with the naked eye after forming the pattern of the transparent electrode. In addition, an extinction coefficient of indium tin oxide (ITO) of short wave band (450nm) can be controlled to suppress yellowing of ITO, thereby solving the problems such as deterioration of transmittance of a display′s light source and color variation thereof after assembly with the light source. Further, a transparent electrode maximizing transparency can be manufactured, thereby improving visibility of a final panel product by the improved transparency of the transparent electrode.;COPYRIGHT KIPO 2014
机译:本发明涉及一种利用电子束蒸发制造用于触摸屏的透明电极结构的方法。更具体地,通过在基板上依次堆叠厚度为35至55埃的TiO 2,厚度为450至475埃的SiO 2,厚度为125至145的TiO 2来获得用于触摸屏的透明电极结构。厚度为275至300埃的SiO 2和厚度为240至260埃的ITO。分别在电子束蒸发中。特别地,通过规定沉积速度,沉积中使用的亚离子枪的氧气分压,腔室温度,腔室中氧气和真空度的维持以及ITO沉积之前的预热条件来制造透明电极。形成透明电极的透射率,使其最接近于面板制造中作为基本构件的玻璃或聚合物膜的透射率,从而提高透明性,从而在形成图案的图案后不被肉眼识别。透明电极。另外,可以控制短波段(450nm)的铟锡氧化物(ITO)的消光系数以抑制ITO的泛黄,从而解决诸如显示器和原色光源的透射率降低以及其后的颜色变化之类的问题。与光源组装。此外,可以制造使透明性最大化的透明电极,从而通过提高透明电极的透明性来提高最终面板产品的可视性。; COPYRIGHT KIPO 2014

著录项

  • 公开/公告号KR101382209B1

    专利类型

  • 公开/公告日2014-04-07

    原文格式PDF

  • 申请/专利权人 OPTRONTEC CO. LTD.;

    申请/专利号KR20130047732

  • 发明设计人 BAE JUNG JIN;HYUN SUNG HWAN;KONG JIN;

    申请日2013-04-29

  • 分类号H01B13/00;G06F3/041;H01L21/203;

  • 国家 KR

  • 入库时间 2022-08-21 15:41:13

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