METHOD FOR FABRICATING MEMS DEVICE ALLOWING HIGH-TEMPERATURE PROCESS

摘要

The present invention relates to a method for fabricating a MEMS device that has an excellent etching selectivity with respect to various types of inorganic materials, is better in performance and shape than existing MEMS devices because the thickness of a film can be easily adjusted depending on devices, allows the use of existing semiconductor processes, and uses an amorphous carbon film as a sacrificial layer, including a step for forming a lower structure; a step for forming the amorphous carbon film as the sacrificial layer on the lower structure; a step for forming an insulating supporting layer on the amorphous carbon film; a step for forming an etching protection film on the insulating supporting layer, performing a single photolithography process, etching the insulating supporting layer and the amorphous carbon film at a time, and forming via holes which expose the lower structure through the insulating supporting layer and the amorphous carbon film; a step for forming an upper structure that has a sensor structure on the insulating supporting layer; a step for forming one or more through-holes through the insulating supporting layer; and a step for entirely removing the amorphous carbon film through the through-holes so that the lower structure and the upper structure are arranged apart from each other. The sensor structure is formed within a temperature section of 250°C to 450°C.;COPYRIGHT KIPO 2014