WITHIN-SEQUENCE METROLOGY BASED PROCESS TUNING FOR ADAPTIVE SELF-ALIGNED DOUBLE PATTERNING

摘要

Device and method is disclosed for that sort of restraint double patterning . The method includes the step of providing a substrate with a measuring unit adapted for etching processes and the processing platform configured to perform a deposition process and a vacuum within the critical dimension (CD) measurements . The vacuum within the CD measurements are utilized for a feed-forward control or feedback or feedforward suitable suitable control of the process parameters of the process sequence chamber processing platform . In one aspect , the first layer of the multilayer stack is masked and etched to form a template mask , in vacuo CD measurement of the template mask is made , the spacer adjacent to the template mask , forming a width which is dependent on the CD measurement of the template mask is . ;