Field effect transistor having localized halo ion region, and semiconductor memory, memory card, and system including the same

摘要

The present invention optimizes the hot- electron organic punch-through characteristics , gate -drain leakage characteristics and performance of organic transistors, providing a field effect transistor comprising a localized region that can be a halo ion . Field effect transistor according to an embodiment of the present invention , the substrate , the active region including a channel region and source / drain region formed on a portion in the substrate , the gate structure which contacts the active region and electrically , and in the substrate the source / drain regions adjacent the opposite ends of the haloalkyl comprises a localized ion region comprising the halo region formed by localized ion .