Method for depositing thin films by mixed pulsed CVD and ALD

摘要

in the deposition Sikkim film on a substrate, the film layer is one using the atomic layer deposition (ALD) by evaporation, and to deposit the film by the film method other layer is deposited using a pulsed chemical vapor deposition (CVD). During part of the ALD method, the magnetic on the substrate-limiting the reaction of cross-reactivity that is deposited in sequential and alternating pulses flowing giving the layer is formed. During part of the pulsed CVD method, by giving the two flow CVD reaction with the other layer is deposited within the reaction chamber, at least a first reactant of the reaction is shed into the CVD reaction chamber and into the pulse, the pulse they are at least partially overlapped with the flow of the second reactant of the CVD reaction. Portion of the ALD and CVD methods may be used to deposit a layer having a different composition, whereby, for example, may form the nano-laminate film. Preferably, the second high-quality CVD film by passing the reactants into the reaction chamber for a longer total time duration than the first 1 CVD reaction are formed. In some embodiments, the pulse of the third reactant are separated by a duration of at least about 1.75 times the length of the pulse. Preferably a single layer of material that is deposited in less than about eight per pulse of the claim 1 CVD reaction.