A DIODE, A BIPOLAR JUNCTION TRANSISTOR(BJT) AND A METHOD OF FORMING ONE OR MORE DIODES IN A FIN FIELD-EFFECT TRANSISTOR(FinFET) DEVICE

摘要

fin field effect transistor (FinFET) IC , including a FinFET by utilizing a variety of process steps in the formation process diodes , and bipolar junction transistors within the device (BJT) are formed . Diodes or BJT includes a pin array region and an isolated p-well in the region having a pin portion of the pin array region surrounding the n-well within the n -wells and isolated pin region having different depths . Diodes and BJT those for n -wells and p- wells FinFET n -wells and p -wells , along with the injection .