首页> 外国专利> Method for generating endowment channel in semiconductor layer of photovoltaic solar cell, involves inserting dopant into semiconductor layer by local warming action for producing endowment region

Method for generating endowment channel in semiconductor layer of photovoltaic solar cell, involves inserting dopant into semiconductor layer by local warming action for producing endowment region

机译:在光伏太阳能电池的半导体层中产生end赋沟道的方法,包括通过局部加热作用将掺杂剂插入半导体层中以产生end赋区

摘要

The method involves directly or indirectly applying a doping layer at a side of a semiconductor layer (1), where the doping layer contains dopant of an emitter doping type for producing an endowment region. The endowment region is formed as an endowment channel, which extends from the side of the semiconductor layer to an opposite side of the semiconductor layer and/or up to an emitter formed at the latter side. The dopant is inserted into the semiconductor layer by local warming action for producing the endowment region. Independent claims are also included for the following: (1) a method for manufacturing a EWT solar cell (2) a photovoltaic solar cell comprising a semiconductor layer.
机译:该方法涉及在半导体层(1)的一侧直接或间接施加掺杂层,其中该掺杂层包含用于产生赋形区域的发射极掺杂类型的掺杂剂。赋予区域形成为赋予通道,该赋予通道从半导体层的侧面延伸至半导体层的相对的侧面和/或直至在该侧面形成的发射极。通过局部加热作用将掺杂剂插入半导体层中,以产生the赋区。还包括以下独立权利要求:(1)一种用于制造EWT太阳能电池的方法(2)一种包括半导体层的光伏太阳能电池。

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