Process for producing solar cell, involves doping surface of semiconductor substrate in predetermined surface region by local application of dopant through spray nozzle in plasma spray process and generating epitaxy layer

摘要

The process involves doping a surface i.e. silicon wafer, of a semiconductor substrate (7) in a predetermined surface region by a local application of a dopant through a spray nozzle (3) in a plasma spray process and generating an epitaxy layer. Endowed particles of semiconductor material in a spray (3S) are melted and the epitaxial layer is formed on the semiconductor substrate, where the dopant is available in elemental or oxide form and contains phosphorous for the production of n-doped regions. An independent claim is also included for an arrangement for carrying out a process for producing a solar cell.