首页>
外国专利>
Method for correcting wavefront reflected from mirror for microlithography projection exposure system having projection optics, involves correcting wavefront by removing layer of multi-layer coating in one selected portion
Method for correcting wavefront reflected from mirror for microlithography projection exposure system having projection optics, involves correcting wavefront by removing layer of multi-layer coating in one selected portion
The method involves correcting (47) a wavefront by removing a layer of multi-layer coating in one selected portion, where the layer in the selected portion is removed by introduction of local hydrogen in one silicon containing layer of the multi-layer coating. A barrier layer is deposited on the multi-layer coating in the partial region after removing one layer in the selected portion. The material of the barrier layer is selected from the group consisting of carbon, boron carbide and silicon nitride. An independent claim is included for a mirror for a microlithography projection exposure system.
展开▼