首页> 外国专利> Method for correcting wavefront reflected from mirror for microlithography projection exposure system having projection optics, involves correcting wavefront by removing layer of multi-layer coating in one selected portion

Method for correcting wavefront reflected from mirror for microlithography projection exposure system having projection optics, involves correcting wavefront by removing layer of multi-layer coating in one selected portion

机译:校正具有投影光学系统的微光刻投影曝光系统从镜面反射的波前的方法,包括通过去除一个选定部分中的多层涂层来校正波前

摘要

The method involves correcting (47) a wavefront by removing a layer of multi-layer coating in one selected portion, where the layer in the selected portion is removed by introduction of local hydrogen in one silicon containing layer of the multi-layer coating. A barrier layer is deposited on the multi-layer coating in the partial region after removing one layer in the selected portion. The material of the barrier layer is selected from the group consisting of carbon, boron carbide and silicon nitride. An independent claim is included for a mirror for a microlithography projection exposure system.
机译:该方法包括通过去除一个选定部分中的多层涂层的层来校正(47)波前,其中通过将局部氢引入多层涂层的一个含硅层中来去除选定部分中的层。在去除所选部分中的一层之后,在部分区域的多层涂层上沉积阻挡层。阻挡层的材料选自碳,碳化硼和氮化硅。对于微光刻投影曝光系统的镜子包括独立权利要求。

著录项

  • 公开/公告号DE102012223669A1

    专利类型

  • 公开/公告日2013-11-21

    原文格式PDF

  • 申请/专利权人 CARL ZEISS SMT GMBH;

    申请/专利号DE201210223669

  • 发明设计人 WEISER MARTIN;BLANCKENHAGEN GISELA VON;

    申请日2012-12-19

  • 分类号G02B5/08;G02B1/10;G03F7/20;

  • 国家 DE

  • 入库时间 2022-08-21 15:37:36

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