Iii - v - semiconductor structures with reduced pit - defective and a method of forming thereof

摘要

Embodiments relate to semiconductor structures and a method of forming thereof. In some embodiments the method can be used, semiconductor structures from iii - v - materials, such as, for example, ingan, to produce. It is an in - iii - v - semiconductor layer with a concentration of indium increase by means of a saturation region, in that the growth conditions, such as, for example, a temperature of a growth surface, are set in order to produce by means of saturation region, in which the in - iii - v - semiconductor layer with a reduced density of v - pits relative to the saturation region increases.