A process for the preparation of a further developed metal molding and method for the production of a power semiconductor device having a soldered connection that these further developed using metal shaped bodies.

摘要

A process for the production of a power semiconductor device with a base plate and a materially connected by means of a soldered connection that this substrate is presented with the following method steps of: providing of the base plate and of the substrate; disposing a further developed metal molding on a connecting surface of the base plate or of the substrate, wherein this is further developed a metal molded bodies with a metal shaped bodies from a surface made of particles introduced, and these particles have a minimum diameter of between 80% and 100% of the thickness of the later solder joint; arrangement of the base plate to the substrate, wherein the metal is further developed between the connecting surfaces; action of temperature comes to lie with a the fusion temperature of which is higher than the melting temperature of the metal molding, wherein the metal melt, the particles in the molten metal is produced and a soldered connection that penetrate. Furthermore, a method for producing the further developed metal molding by pressing in of the particles into the metal shaped body is presented.