Method for electrical characterization of semiconductor-on-insulator structure that is utilized in microelectronics, involves determining electric characteristic of structure based on measured current and measured voltage

摘要

The method involves defining a drain and a source by a set of electrodes. A voltage (Vd) is applied between the drain and the source. A current (Id) between the drain and the source and a voltage (V23) between another set of electrodes between the drain and the source are measured for a set of grid voltages (Vg). A unit is formed by a semiconductor-on-insulator (SeOI) structure and a metal plate defining a FET due to application of the grid voltages. An electric characteristic of the structure is determined based on the measured current and the measured voltage. An independent claim is also included for a device for electrical characterization of a SeOI structure.