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PLASMA CVD DEVICE, FILM DEPOSITION METHOD, AND DLC COATING PIPE ARRANGEMENT

机译:等离子CVD设备,膜沉积方法和DLC涂层管的布置

摘要

PROBLEM TO BE SOLVED: To provide a plasma CVD device capable of depositing a thin film on the inner face of a pipe arrangement without any vacuum vessel.SOLUTION: According to one aspect of the invention, a plasma CVD device comprises: a first sealing member for sealing one end of a pipe arrangement 11; a second sealing member for sealing the other end of the pipe arrangement; a gas introduction mechanism connected to the first sealing member for introducing a raw material gas into the pipe arrangement; an exhaust mechanism connected to the second sealing member for evacuating the inside of the pipe arrangement; an electrode 15 disposed in the pipe arrangement; and a high-frequency power source 14a electrically connected with the electrode or the pipe arrangement.
机译:解决的问题:提供一种等离子体CVD装置,其能够在没有任何真空容器的情况下在管道装置的内表面上沉积薄膜。解决方案:根据本发明的一个方面,等离子体CVD装置包括:第一密封构件用于密封管道装置11的一端;第二密封件,用于密封管道装置的另一端。气体引入机构连接到第一密封构件,用于将原料气体引入到管道装置中。排气机构,其连接到第二密封构件,用于排空管道装置的内部。布置在管道装置中的电极15;高频电源14a与电极或配管配置电连接。

著录项

  • 公开/公告号JP2015045039A

    专利类型

  • 公开/公告日2015-03-12

    原文格式PDF

  • 申请/专利权人 YUUTEKKU:KK;

    申请/专利号JP20130175578

  • 发明设计人 HONDA YUJI;ARAMAKI NORIO;

    申请日2013-08-27

  • 分类号C23C16/505;C23C16/27;H05H1/46;

  • 国家 JP

  • 入库时间 2022-08-21 15:35:33

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