METHOD OF DETERMINING AMOUNT OF IMPURITY THAT CONTAMINATING MATERIAL CONTRIBUTES TO HIGH PURITY SILICON AND FURNACE FOR TREATING HIGH PURITY SILICON

摘要

PROBLEM TO BE SOLVED: To provide a furnace assembly with which dust generation caused by operations of various compositions of the furnace assembly or by operations necessary for introducing high purity compositions into a furnace is minimized for the purpose of reducing the amount of an impurity in all steps of processing including annealing, in an incentive to reduce the amount of the impurity existing in the high purity compositions such as a high purity crystalline silicon.;SOLUTION: A sample of high purity silicon encased in a contaminating material is heated in a furnace 10. A change in an impurity content of the high purity silicon is compared with an impurity content of the high purity silicon prior to the step of heating, and is determined after the step of heating. A furnace for heat treating the high purity silicon comprises a housing 12 which defines a heating chamber. The housing is at least partially formed from a low contaminating material which contributes less than 400 ppta of impurities to the high purity silicon during heating at an annealing temperature for a sufficient time period to anneal the high purity silicon.;COPYRIGHT: (C)2015,JPO&INPIT