METHOD OF DETERMINING AN AMOUNT OF IMPURITIES THAT A CONTAMINATING MATERIAL CONTRIBUTES TO HIGH PURITY SILICON AND FURNACE FOR TREATING HIGH PURITY SILICON

摘要

The present invention relates to a method for determining the amount of impurities that a contaminant provides to high purity silicon, including at least partially wrapping a sample of said high purity silicon in a contaminant. The sample enclosed in the contaminant is heated in the furnace. The variation of the impurity content of the high purity silicon is determined after the heating step as compared with the impurity content of the high purity silicon before the heating step. The furnace for heat treating the high purity silicon includes a housing defining a heating chamber. The housing is made at least in part from low contaminants that provide less than 400 parts per hundred impurities per ply of high purity silicon during heating at the annealing temperature for a sufficient time to anneal the high purity silicon, Less than 400 parts of impurities.;