METHOD FOR CRYSTALLIZATION OF AMORPHOUS SILICON, METHOD FOR FORMING CRYSTALLIZED SILICON FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND APPARATUS FOR FILM FORMATION

摘要

PROBLEM TO BE SOLVED: To provide a method for crystallization of amorphous silicon by which a monocrystalline region with a large particle diameter can be obtained without lowering the productivity.SOLUTION: A method for crystallization of amorphous silicon comprises the steps of: providing, on a first amorphous silicon film 2 slow in crystalline growth, a second amorphous silicon film 3 faster than the first amorphous silicon film 2 in crystalline growth; and performing a crystallization process on the first and second amorphous silicon films 2 and 3 thus laminated, thereby crystallizing at least the second amorphous silicon film 3 to produce a crystallized silicon film 3a.