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INTEGRATED III-NITRIDE D-MODE HFET WITH CASCODED PAIR OF HALF BRIDGE
INTEGRATED III-NITRIDE D-MODE HFET WITH CASCODED PAIR OF HALF BRIDGE
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机译:带有半桥级联的集成III型氮化物D型HFET
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摘要
PROBLEM TO BE SOLVED: To suppress damage to a load and a circuit when depletion mode III-nitride field effect transistors (FETs) are used as high side and low side switches.;SOLUTION: An integrated half bridge circuit includes: a die having first and second depletion mode III-nitride field effect transistors (FETs); and a group IV enhancement mode FET. The group IV enhancement mode FET has a normally off composite cascoded switch cascoded with the first depletion mode III-nitride FET as a high side switch and the second depletion mode III-nitride FET as a low side switch.;COPYRIGHT: (C)2015,JPO&INPIT
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