Integrated III-Nitride D-mode HFET with cascoded pair half bridge

摘要

There are disclosed herein various implementations of a group III-V power conversion circuit including a monolithcially integrated half bridge having a depletion mode III-Nitride field-effect transistor (FET), and a normally OFF composite cascoded switch including a depletion mode III-Nitride FET and an enhancement mode group IV FET. In one exemplary implementation, the monolithcally integrated half bridge includes a high side depletion mode III-Nitride FET having an enable switch coupled in the conduction path of the high side depletion mode III-Nitride FET.