MASK BLANK, MASK BLANK WITH NEGATIVE RESIST FILM, PHASE SHIFT MASK, AND MANUFACTURING METHOD OF PATTERNED PRODUCT USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a photolithography having excellent transcript properties, with improved resistance to exposure to ArF excimer laser irradiation and improved resistance to washing.SOLUTION: A mask blank for use in manufacturing a half-tone type phase shift mask to be exposed to ArF excimer laser irradiation includes a transparent substrate and a semi light transmitting film formed of SiON(x and y satisfy: 0x1, 0y1, and 0x+y1) formed on the transparent substrate. The semi light transmitting film has an extinction coefficient in a range of 0.2 to 0.45 for the wavelength of the ArF excimer laser exposure light, a refractive index in a range of 2.3 to 2.7 for the wavelength of the ArF excimer laser exposure light, and a light transmittance in a range of 15% to 38% for the wavelength of the ArF excimer laser exposure light.