LOCAL ORIENTATION DOMAIN EVALUATION METHOD IN POLYCRYSTALLINE SILICON, POLYCRYSTALLINE SILICON ROD SELECTION METHOD, POLYCRYSTALLINE SILICON ROD, AND POLYCRYSTALLINE SILICON FABRICATION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a technology which selects, with high levels of quantitativity and reproducibility, a desirable polycrystalline silicon as a raw material for single crystal silicon fabrication, and contributes to stable fabrication of the single crystal silicon.;SOLUTION: When evaluating a degree of local orientation of a polycrystalline silicon by x-ray diffraction, an adopted disc-shaped sample (20) is positioned in a location in which Bragg reflection from a mirror index face hkl is detected; an in-plane rotation is carried out at a rotation angle φ with the center of the disc-shaped sample (20) as the center of rotation thereof, such that an x-ray projection region which is defined by a slit φ-scans a primary surface of the disc-shaped sample (20); a chart is derived which denotes a rotation angle (φ) dependency of the disc-shaped sample (20) of the Bragg reflection intensity from the Miller index face hkl; a baseline is derived from the chart; and a value obtained by dividing a peak-top value by the baseline value is employed as an evaluation index of the degree of local orientation.;COPYRIGHT: (C)2015,JPO&INPIT