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ETCHANT AND ETCHANT KIT, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
ETCHANT AND ETCHANT KIT, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
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机译:附赠品和附赠品套件,使用其的附赠方法以及制造半导体基质产品的方法
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摘要
PROBLEM TO BE SOLVED: To provide an etching method capable of improving the surface roughness of a layer containing Ge, and selectively removing a second layer containing a specific metal, an etchant and an etchant kit used for the same, and a method for manufacturing a semiconductor substrate product.;SOLUTION: An etchant for selectively removing a second layer from a semiconductor substrate which has a first layer containing germanium (Ge) and the second layer containing a specific metal element other than germanium (Ge), and containing following specific acidic compounds (specific acidic compounds: sulfuric acid (H2SO4), nitrate (HNO3), phosphoric acid (H3PO4), phosphonic acid (H3PO3) or organic acid).;COPYRIGHT: (C)2015,JPO&INPIT
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机译:解决的问题:提供一种能够改善包含Ge的层的表面粗糙度并选择性地去除包含特定金属的第二层的蚀刻方法,蚀刻剂和用于该蚀刻方法的蚀刻剂套件及其制造方法。半导体衬底产品。解决方案:一种用于从半导体衬底中选择性去除第二层的蚀刻剂,该蚀刻剂的第一层包含锗(Ge),第二层包含除锗(Ge)之外的特定金属元素,并包含以下特定酸性物质化合物(特定的酸性化合物:硫酸(H 2 Sub> SO 4 Sub>),硝酸盐(HNO 3 Sub>),磷酸(H 3 Sub> PO 4 Sub>),膦酸(H 3 Sub> PO 3 Sub>)或有机酸);版权:(C)2015,日本特许厅
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