ETCHING METHOD, ETCHANT USED THEREFOR, ETCHANT KIT AND SEMICONDUCTOR SUBSTRATE PRODUCT MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an etching method which is performed on a germanium-containing layer to allow a layer containing specific metal to be selectively removed and which exhibits excellent etching characteristics; and provide an etchant used for the etching method, an etchant kit and a semiconductor substrate product manufacturing method.;SOLUTION: To provide an etching method which is performed on a germanium-containing layer to allow a layer containing specific metal to be selectively removed and which exhibits excellent etching characteristics; and provide an etchant used for the etching method, an etchant kit and a semiconductor substrate product manufacturing method.;COPYRIGHT: (C)2015,JPO&INPIT