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Target and its manufacturing method for sputtering the oxide sintered body as well as the forming method and thin film formation method of a thin film using the target

机译:用于溅射氧化物烧结体的靶及其制造方法以及使用该靶的薄膜的形成方法和薄膜形成方法

摘要

PROBLEM TO BE SOLVED: To provide a GTO sputtering target that can control the generation of a nodule and a particle even at continuous sputtering, and can obtain a film with high uniformity of a membrane property, and especially to provide a sputtering target for an FPD.SOLUTION: The oxide sintered compact target for sputtering includes: 1-20 mol% of GaO; and the balance SnOand inevitable impurities, and the oxide sintered compact target for sputtering is characterized in that the relative density is at least 97%, and the bulk resistivity is at most 1,000 cm in the phase observed in the structure of the oxide sintered compact target.
机译:解决的问题:提供一种即使在连续溅射时也能够控制结核和颗粒的产生的GTO溅射靶,并且能够获得膜性质均匀性高的膜,特别是提供用于FPD的溅射靶。解决方案:溅射用氧化物烧结体靶包括:1-20 mol%的GaO;本发明的特征在于,在氧化物烧结体靶的结构中观察到的相中,相对密度为97%以上,体电阻率在1000cm以下,其余为SnO和不可避免的杂质。 。

著录项

  • 公开/公告号JP5681590B2

    专利类型

  • 公开/公告日2015-03-11

    原文格式PDF

  • 申请/专利权人 JX日鉱日石金属株式会社;

    申请/专利号JP20110179303

  • 发明设计人 掛野 崇;

    申请日2011-08-19

  • 分类号C23C14/34;C04B35;H01L21/285;H01L21/28;H01L29/786;

  • 国家 JP

  • 入库时间 2022-08-21 15:31:34

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