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how suppression of the change to the current change of the amplification factor of the semiconductor device, the photoelectric conversion element and a method of manufacturing a semiconductor device

机译:如何抑制半导体器件,光电转换元件的电流变化对半导体器件的放大率的变化以及制造半导体器件的方法

摘要

PROBLEM TO BE SOLVED: To amplify an electric current which changes at a level of several digits with a fixed amplification factor without using a complicated circuit.;SOLUTION: The semiconductor device which includes a first semiconductor region having a first conductivity type, a second semiconductor region which is provided in contact with the first semiconductor region and has a conductivity type opposite to that of the first semiconductor region, and a third semiconductor region which is provided in contact with the second semiconductor region on a second surface and has the first conductivity type further includes a fourth semiconductor region which is provided in contact with the second semiconductor, surrounds the third semiconductor region so as to be separated from each other, and has an impurity concentration higher than that of the second semiconductor region.;COPYRIGHT: (C)2013,JPO&INPIT
机译:解决的问题:在不使用复杂电路的情况下,以固定的放大倍数放大以几位数字变化的电流;解决方案:半导体器件包括具有第一导电类型的第一半导体区域,第二半导体设置为与第一半导体区域接触并具有与第一半导体区域相反的导电类型的区域,以及设置为在第二表面上与第二半导体区域接触并具有第一导电类型的第三半导体区域还包括第四半导体区域,该第四半导体区域设置成与第二半导体接触,并且包围第三半导体区域从而彼此分离,并且具有比第二半导体区域的杂质浓度高的杂质浓度。 2013,日本特许厅

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