III-nitride field effect transistor that can withstand high temperature reverse bias test conditions (FET)

摘要

In temperature-source voltage _{(V gs),} of about 140 ℃, it has been between the operation of at least about 10 hours - drain of about 56 volts - gate of about -14 volts source voltage _{(V DS),} from about -8 volts When the field effect transistor of III-nitride base having a power degradation of less than about 3.0dB (FET) is provided.