High temperature gate-bias and reverse-bias tests on SiC MOSFETs

摘要

As SiC MOSFET manufacturing technology continues to mature, an assessment of the stability and reliability becomes essential for the advanced development of the devices based on it. HTGB and HTRB tests are the commonly used qualification tests for discrete semiconductor devices which are performed in this work to characterise gate-oxide integrity and verify junction and termination robustness. Gate bias stress induced threshold voltage instability and leakage current degradation resulted from drain-source reverse bias stress at elevated temperature is investigated and reported.