III-nitride field effect transistor (FET) that can withstand high temperature reverse bias test conditions

摘要

Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about -8 to about -14 volts and a temperature of about 140° C. for at least about 10 hours.