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Tungsten diaza butadiene molecules , their use in the deposition of the synthesis and the tungsten -containing layer

机译:钨二氮杂丁二烯分子,它们在合成沉积和含钨层中的用途

摘要

Tungsten Zia The butadiene molecule , I disclose their use in the deposition of the production method and the tungsten -containing film . Molecules of disclosure , the expression W (DAD) 3 Have ( in the formula , DAD is 1,4 Jiazabuta -1,3- diene ligand and its reduced derivatives ) . DAD ligand directly coordinated to tungsten via the N atom . The molecules of the disclosure can be used for the deposition of the tungsten film , a tungsten nitride film, a tungsten carbide nitride film or a tungsten oxide film or any other tungsten-containing layer . Tungsten-containing layer is heat and / or plasma assisted CVD, ALD, may be deposited using the molecules disclosed in pulsed CVD or any other type of deposition process. [ Selection Figure ] None
机译:钨Zia我公开了丁二烯分子在沉积方法和含钨薄膜沉积中的用途。公开的分子,表达式W(DAD) 3 具有(式中,DAD为1,4甲杂布他-1,3-二烯配体及其还原衍生物)。 DAD配体通过N原子直接与钨配位。本公开的分子可用于沉积钨膜,氮化钨膜,碳化钨氮化物膜或氧化钨膜或任何其他含钨层。含钨层是热的和/或等离子体辅助的CVD,ALD,可以使用在脉冲CVD或任何其他类型的沉积工艺中公开的分子来沉积。 [选择图]无

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