首页> 外国专利> TUNGSTEN DIAZABUTADIENE MOLECULES, THEIR SYNTHESIS, AND THEIR USE FOR TUNGSTEN CONTAINING FILM DEPOSITIONS

TUNGSTEN DIAZABUTADIENE MOLECULES, THEIR SYNTHESIS, AND THEIR USE FOR TUNGSTEN CONTAINING FILM DEPOSITIONS

机译:钨二氮杂丁二烯分子,它们的合成及其在含钨薄膜沉积中的用途

摘要

Disclosed are tungsten diazabutadiene molecules, their method of manufacture, and their use in the deposition of tungsten-containing films. The disclosed molecules have the formula W(DAD)3, wherein DAD is a 1,4- diazabuta-1,3-diene Isgand and its reduced derivatives. The DAD !igand is directly coordinated to tungsten through the N atoms. The disclosed molecules may be used to deposit tungsten, tungsten-nitride, tungsten- carbonitride, or tungsten oxide films, or any other tungsten-containing films. The tungsten-containing films may be deposited using the disclosed molecules in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.
机译:公开了二氮杂丁二烯钨分子,其制造方法及其在含钨膜的沉积中的用途。所公开的分子具有式W(DAD) 3 ,其中DAD是1,4-二氮杂丁-1,3-二烯Isgand及其还原衍生物。 DAD配体通过N原子直接与钨配位。所公开的分子可用于沉积钨,氮化钨,碳氮化钨或氧化钨膜或任何其他含钨膜。可以使用所公开的分子在热和/或等离子体增强的CVD,ALD,脉冲CVD或任何其他类型的沉积方法中沉积含钨的膜。

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